MXD50N06概述:
MXD50N06是VDS=60V, ID=50AR , R DS(ON) (Typ.)=11.5mΩ @ VGS=10V,MXD50N06提供TO-252封装。
The MXD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . Those devices are suitable for use in PWM, load switching and general purpose applications.
MXD50N06特性:
VDS=60V, ID=50A
R DS(ON) (Typ.)=11.5mΩ @ VGS=10V
Ultra Low On-Resistance
High UIS and UIS 100% Test
MXD50N06应用:
Power switching application
Load switch
MXD50N06订购信息:
MXD50N06 ORDERING INFORMATION |
Device |
StorageTemperature |
Package |
Devices Per Reel |
MXD50N06 |
-55°C to 175°C |
TO-252 |
- |
MXD50N06典型应用及脚位图: