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PE8124HM1

  • PE8124HM1是VDS>12V，ID=24A，RDS(ON)<3.9mΩ，@VGS=4.5V，RDS(ON)<4.2mΩ，@VGS=3.8V，RDS(ON)<4.6mΩ，@VGS=3.0V，RDS(ON)<5.4mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

    PE8124HM1的丝印是8124HM.

    PE8124HM1提供DFN3x3-8L封装.


    PE8124HM1概述：
        PE8124HM1是VDS>12V,ID=24A，RDS(ON)<3.9mΩ，@VGS=4.5V，RDS(ON)<4.2mΩ，@VGS=3.8V，RDS(ON)<4.6mΩ，@VGS=3.0V，RDS(ON)<5.4mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8124HM1的丝印是8124HM.PE8124HM1提供DFN3x3-8L封装.
        The PE8124HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.


    PE8124HM1特性：
    VDS > 12V, ID = 24A
    RDS(ON) < 3.9mΩ @ VGS=4.5V
    RDS(ON) < 4.2mΩ @VGS=3.8V
    RDS(ON) < 4.6mΩ @VGS=3.0V
    RDS(ON) < 5.4mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package


    PE8124HM1应用：
    PWM applications
    Load switch
    Power management


    PE8124HM1典型应用及引脚：

    咨詢：PE8124HM1
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