MXN3388L概述:
MXN3388L是20V,8A,双N沟道MOSFET,The MXN3388L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. MXN3388L丝印MXN3388L,MXN3388L提供DFN3X3-8L 封装。
MXN3388L特性:
MXN3388L提供DFN3X3-8L 封装
VDS =20V, ID =8A
RDS(ON) (Typ.)=15.5mΩ @ V GS =2.5V
RDS(ON) (Typ.)=10.6mΩ @ V GS =3.8V
RDS(ON) (Typ.)=10mΩ @ V GS =4.5V
ESD Rating: 2000V HBM
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
MXN3388L应用:
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
MXN3388L ORDERING INFORMATION:
Part Number |
StorageTemperature |
Package |
Devices Per Reel |
MXN3388L |
-55°C to 150°C |
DFN3X3-8L |
5000 |
MXN3388L典型应用电路及封装图: