MXN2283规格书下载
MXN2283概述:
MXN2283是VDS=-20V,ID=3.2A,RDS(ON)=68mΩ,@VGS=-4.5V,RDS(ON)=95mΩ,@VGS=-2.5V,RDS(ON)=140mΩ,@VGS=-1.8V的Dual P-Channel MOSFET.MXN2283提供PDFN2x2-6L封装.
The MXN2283 uses advanced trench technology and design to provide excellent RDS(ON) low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a load switch or in PWM applications.
MXN2283特性:
VDS =-20V,ID =3.2A
RDS(ON) = 68 m Ω @ VGS=-4.5V
RDS(ON) = 95 m Ω @ VGS=-2.5V
RDS(ON) = 140mΩ @ VGS=-1.8V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
MXN2283应用:
PWM applications
Load switch
Power management
MXN2283典型应用及引脚: