On April 26, according to the third generation semiconductor industry technology strategic alliance, Dongguan Qingxin Semiconductor Technology Co., Ltd. (hereinafter referred to as "Qingxin semiconductor") recently obtained a financing of 30 million yuan. The company will continue to focus on the research and development and product innovation of chip core technologies such as third-generation semiconductor SiC power devices, and accelerate the domestic substitution of this technology.
According to the official website of Qingxin semiconductor, the company is an innovative model factory incubation project of Songshanhu material laboratory, which is supported by Qingda venture capital, Qingda Guanshang, Hewan investment and other industrial funds.
At present, Qingxin semiconductor has built a pilot production line of 6-inch SiC power devices with international advanced level, covering the design, manufacturing, testing, packaging and reliability evaluation of SiC power devices, realizing the independent manufacturing of SiC power devices, and the developed 1200V, 2000V and 3300v SiC power device products have gradually entered the stage of mass production.
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